کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5396793 | 1505766 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology change and its chemical states at the Si(1Â 0Â 0) surface after dipping in hot ultrapure water
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The changes in morphology and chemical states of Si(1Â 0Â 0) surface upon dipping in ultrapure water were investigated by using X-ray photoelectron spectroscopy and atomic force microscope. In ultrapure water, the oxidation and the etching competitively progressed at the Si(1Â 0Â 0) surface after HF treatment and made the smooth surface rough. However, the surface covered with a thick native oxide film was not etched at all. That meant the precise Si4+ component remained without being etched, whereas rest parts of the surface could be etched. This selective etching led to the rough surface morphology. Oâ and OHâ ions might take oxidizing and etching at the surface after HF treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 169, Issues 2â3, February 2009, Pages 92-96
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 169, Issues 2â3, February 2009, Pages 92-96
نویسندگان
Yuichi Sano, Kazuhisa Nakatsuka, Yuki Morikage, Yoshitomo Kamiura, Yusuke Mizokawa,