کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539681 871266 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Golden bump for 20 micron diameter wire bond enhancement at reduced process temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Golden bump for 20 micron diameter wire bond enhancement at reduced process temperature
چکیده انگلیسی

With the rapid development of advanced microelectronic packaging technologies, research on fine-pitch wire bonding with improved reliability is driven by demands for smaller form factors and higher performance. In this study, thermosonic wire bonding process with a 20 μm wire for fine-pitch interconnection is described. To strengthen stitch bonds made in a gold–silver bonding system when the bonding temperature is as low as 150 °C, ball bumps (security bump) are placed on top of the stitch bonds. The ball–stitch bond and bump forming parameters are optimized using a design of experiment (DOE) method. A comparison of pull test results for stitch bonds with and without security bumps shows a substantial increase of the stitch pull force (PF) due to the use of security bonds. By varying the relative position of the security bumps to the stitch bonds via wedge shift offset (WSO), a WSO window ranging from 15 to 27 μm results in stitch PF higher than 7 gf, which is equivalent to an increase in average stitch PF of 118%.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 9, September 2011, Pages 3024–3029
نویسندگان
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