کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5396890 | 1505771 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XPS study of nitrogen-implanted ZnO thin films obtained by DC-Magnetron reactive plasma
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have synthesized pure and N-doped ZnO films by reactive plasma in a DC-Magnetron sputtering system. Nitrogen was implanted by using an ion gun attached to an electron spectrometer. The films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) to investigate their composition and microstructure. XPS revealed the presence of two well-resolved peaks in N 1s spectra at about 396.2 and 404.3 eV. The peak at 404.3 eV has been assigned to zinc nitrite while the peak at 396.2 eV to zinc nitride. After annealing the sample at 250 °C in air for 1 h, one single peak, located at 399.1 eV, was observed. We suggest that this is due to the decomposition of nitrite and the formation of oxynitride.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 163, Issues 1â3, April 2008, Pages 15-18
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 163, Issues 1â3, April 2008, Pages 15-18
نویسندگان
N. Tabet, M. Faiz, A. Al-Oteibi,