کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5397425 | 1505870 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved emission of GaN-LED based on the optimized multilayered lamellar micro-gratings
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved emission of GaN-LED based on the optimized multilayered lamellar micro-gratings Improved emission of GaN-LED based on the optimized multilayered lamellar micro-gratings](/preview/png/5397425.png)
چکیده انگلیسی
We propose a type of GaN-LED based on the optimized multilayered lamellar micro-grating. This structure contains a SiO2 inserted-layer, an Ag grating and a TiO2 film cover-layer. The Ag grating with optimized parameters is used to enhance the internal quantum efficiency and the transmission simultaneously. The TiO2 layer with optimized thickness is utilized to improve the transmission through the multilayered structure. The inserted SiO2 layer suppresses the power loss of Ag grating and further promotes the transmission. The properties of the guided-modes and Purcell effect in this structure are analyzed. The photoluminescence experiment indicates that its peak intensity of top-emission is about 2.2 times greater than the naked sample.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 192, December 2017, Pages 470-477
Journal: Journal of Luminescence - Volume 192, December 2017, Pages 470-477
نویسندگان
Haosu Zhang, Daqing Zhang, Wei Wang,