A comparative study of amorphous silicon carbide and silicon rich oxide for light emission applications

The a-Si1−xCx:H films have been deposited at low temperature (150 °C), while thermal treatments at high temperatures were not necessary as is done for SRO in order to improve its PL intensity. The above makes a-Si1−xCx:H an alternative material for low temperature optoelectronic silicon based devices and also for flexible device applications.