کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539764 1450393 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
22 nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
22 nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching
چکیده انگلیسی

In this work, we demonstrate the fabrication of silicon nanowires down to 22 nm wide using trilayer nanoimprint lithography and wet etching. Using the same template prepared by E-beam lithography (EBL), nanowires with top width of 22 nm and 75 nm are fabricated on boron-doped top silicon layer of SOI substrate. The two samples are tested in 250 ppm NO2 ambient for gas detection. The 22 nm wide one shows a much higher relative sensitivity than the 75 nm wide one. The simulation which calculates the carrier density by solving Poisson equation was carried out and the results well explain the sensitivity disparity between the two samples.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 927–930
نویسندگان
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