Improved scintillation luminescence and thermal stability of In2Si2O7 ceramic phosphor

In2Si2O7 is a known indium-based scintillator with fast ultraviolet photoluminescence. Unfortunately the emission only can be detected below 200 K. the poor thermal stability limits its application at room temperature. In this work, the luminescence improvement of In2Si2O7 was realized by F−-ions doping in the lattices. The ceramic phosphors were via typical solid-state reaction method. The pure crystalline phase with thortveirite-type structure was confirmed by X-ray diffraction (XRD) Rietveld refinements. The photoluminescence (PL) emission and excitation spectra together with the luminescence thermal stability were tested. The fluorescence decay curves CIE emission Stokes shifts were measured. The ceramic samples could present blue luminescence with maximum wavelength at about 340 nm under the excitation of UV light or high energy X-ray irradiation. The pure sample only presents luminescence below 200 K, however, the F-doping can be greatly enhance the luminescence thermal stability. The F-doped In2Si2O7 could present emission signals with fast decay lifetime of 850 ns at room temperature. The luminescence transitions from the In3+-O2− charge transfer (CT) were discussed on the structure properties.