کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539770 | 1450393 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Acid diffusion effects between resists in freezing processes used for contact hole patterning
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Double patterning following an litho–litho-etch scheme is a possible option to create structure widths below the nominal resolution of optical light with current exposure technology. Interactions between the first and second resist layers may influence the final structure created. In this paper, we perform a model based investigation of the possible consequences of the diffusion of photo-generated acid from the second resist to the first one. As a consequence, less acid is available for the deprotection reaction, and we observe a tendency to an increase of the CD values of the primary structure. We attempt to explain observed footing effects in contact holes by this effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 951–954
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 951–954
نویسندگان
Jürgen Fuhrmann, André Fiebach, Andreas Erdmann, Peter Trefonas,