Morphological influence of the beam overlap in focused ion beam induced deposition using raster scan

Material addition using focused ion beam induced deposition (FIBID) is a well-established local deposition technology in microelectronic engineering. We investigated FIBID characteristics as a function of beam overlap using phenanthrene molecules. To initiate the localization of gas molecules, we irradiated the ion beams using a raster scan. We varied the beam overlap between −900% and 50% by adjusting the pixel size from 300 nm to 15 nm. We discuss the changes in surface morphologies and deposition rates due to delocalization by the range effect of excited surface atoms, the divided structure by continuous effect from the raster scan, enhanced localization by discrete effect from replenished gas molecules, the competition between deposition and sputtering processes, and the change in processing time with scan speed (smaller overlap case).