کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5397808 | 1505873 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing](/preview/png/5397808.png)
چکیده انگلیسی
The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 188, August 2017, Pages 595-599
Journal: Journal of Luminescence - Volume 188, August 2017, Pages 595-599
نویسندگان
Yoonsung Nam, Jengsu Yoo, Soo Kyung Chang, Jae-Hyung Wi, Woo-Jung Lee, Dae-Hyung Cho, Yong-Duck Chung,