کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539785 1450393 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Free-standing silicon-nitride zoneplates for neutral-helium microscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Free-standing silicon-nitride zoneplates for neutral-helium microscopy
چکیده انگلیسی

The ground-state helium-4 beam employed by the microscopy technique discussed in this article interacts exclusively with the atoms in the topmost sample-monolayer. Its low-energy (tens of meV) and chemical inertness make the beam an almost ‘ideal’ imaging probe in the sense that a sample surface can be imaged without alteration by the probe. The microscopy technique therefore has promising applications in the imaging of fragile samples and metrology. In this article we present a fabrication process for the diffraction-based focusing element (Fresnel Zoneplate) in such a setup. Zoneplates made previously for this purpose have suffered from low transmission, a problem we have solved with our new process. In addition, we have measured the first-order diffraction efficiency of three zoneplates fabricated with this process. The efficiency of a zoneplate with 388 μm diameter was close to 70% of the theoretically predicted value. We believe the reduction stems mainly from misalignment between the writefields used to pattern the zoneplate. The fabricated zoneplates of 190 μm diameter, which we patterned using a single writefield, have close to the theoretically predicted transmission characteristics; a result that has not been achieved before for neutral atom Fresnel lenses.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 1011–1014
نویسندگان
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