کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539786 1450393 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold
چکیده انگلیسی

In this paper we present a comparative study of two e-Beam Lithography (EBL) processes for Nanoimprinting Lithography (NIL) master mold, i.e. the standard PMMA based EBL Si patterning process and the HSQ process. 20 nm features with minimal sidewall roughness and high uniformity are demonstrated on large surface by using HSQ process. Moreover, to validate this ultra-high resolution HSQ EBL process and to check NIL resolution performances, soft UV-NIL replications were performed using soft hard-PDMS/PDMS bi-layer stamps casted on the HSQ master mold. We demonstrate the replication of sub-20 nm nanodots of high density (pitch 60 nm) with a good uniformity on the whole field area.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 1015–1018
نویسندگان
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