The exciton-phonon interaction as stimulated Raman scattering effect supported by the excitonic photoluminescence in BiI3 layered crystal structure

Raman enhancement in a layered structure of BiI3 was studied under optical excitation near the edge of the fundamental absorption band. This phenomenon simultaneously appears at a low temperature with the generation of the excitonic photoluminescence (PL) band, unequally across the Raman spectrum, i.e. in the Stokes and anti-Stokes Raman branches, being dependent on the superposition of the excitation laser line to the excitonic emission band. Performed with the use of different resonant laser light excitations, this effect is regarded as a signature of the exciton-phonon interaction, which is interpreted in terms of a stimulated Raman scattering process (SRS), resulting from the mixing inside of the sample to two optical fields, the pump laser light and the excitonic PL light.