Single-electron injections in fringing-field-induced charge-trapping memories

• Single-electron injections and trapping events are investigated with NOI device.
• The fringing field assists single electron injection into the SiN spacer.
• Single-electron injecting play prominent roles in most of experiments conditions.
• Demonstrating the NOI devices for potential single-electron storage applications.

In this study, single-electron and multielectron injections and trapping events on gate-to-drain non-overlapped-implantation (NOI) MOSFETs at room temperature are investigated. The trapped charges cause a reduction in the channel current through the fringing capacitance of the NOI are calculated to verify the charge numbers under various gate voltages (Vg) and drain voltages (Vd). The single-electron injection for different vertical and lateral electric fields and its probability trace are also examined by employing the lucky-electron model. These results show that single-electron injecting events play prominent roles in most of experiments under low bias conditions in the NOI MOSFETs. The significant drain current shift under single-electron injection demonstrates the NOI devices for potential single-electron storage applications.

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