کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5398213 1505886 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence
چکیده انگلیسی
We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 175, July 2016, Pages 213-216
نویسندگان
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