کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5398395 | 1505883 | 2016 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 178, October 2016, Pages 84-88
Journal: Journal of Luminescence - Volume 178, October 2016, Pages 84-88
نویسندگان
Minh Tan Man, Tae Whan Kim, Hong Seok Lee,