کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539852 871275 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Rare earth-based high-k materials for non-volatile memory applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Rare earth-based high-k materials for non-volatile memory applications
چکیده انگلیسی

A study of a La-based high-k oxide to be employed as active dielectric in future scaled memory devices is presented. The focus will be held on LaxZr1−xO2−δ (x = 0.25) compound. In order to allow the integration of this material, its chemical interaction with an Al2O3 cap layer has been studied. Moreover, the electrical characteristics of these materials have been evaluated integrating them in capacitor structures. The rare earth-based ternary oxide is demonstrated to be a promising candidate for future non-volatile memory devices based on charge trapping structure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 290–293
نویسندگان
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