Temperature dependence of luminescence spectra in europium doped Ga2O3 film

Europium doped Ga2O3 films were deposited on sapphire substrates by using pulsed laser deposition. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction and photoluminescence. High quality single (−201) oriented Ga2O3 film can be obtained at substrate temperature of 400 °C. The emission intensity of Eu3+ decreased solely with elevated temperature by using 325 nm light, while it had a maximum value at a certain temperature under 488 nm light. Both of the experimental data were well fitted by the luminescence dynamic equation models, suggesting that the variation of the emission intensity may be attributed to the thermal activated distribution of electrons among 7Fj and thermal quenching effect.