کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539869 871275 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices
چکیده انگلیسی

Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conformity of thinnest deposited films was shown. Copper diffusion through ALD Ta2O5 thin films, 20 nm in thickness, was investigated, for three temperatures from 600 to 800 °C, using X-ray Photoelectron Spectroscopy. The failure of such films was detected after a thermal treatment at 700 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 373–378
نویسندگان
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