کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539878 871275 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Residual stress estimation in damascene copper interconnects using embedded sensors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Residual stress estimation in damascene copper interconnects using embedded sensors
چکیده انگلیسی

Mechanical stress in damascene copper/low-k interconnects has been studied by means of micro-rotating sensors embedded in chips and directly integrated in CMOS process flow. A new hinge sensor design has been elaborated and a new analytical model of the mechanical equilibrium of sensors is validated. These sensors allow the study of the average residual stress as a function of the line width in a range from few hundred nanometers to several microns. It was found that the residual stress increases from 290 to 850 MPa in, respectively, 2 and 0.25 μm wide lines. This trend shows a yield stress increase with the line width reduction. Copper grains microstructure change between large and narrow lines is probably one of the reasons for yield stress and so residual stress increase. This microstructure change has been observed by means of Transmission Electron Microscopy (TEM) observations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 412–415
نویسندگان
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