کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539880 | 871275 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
During first metal level interconnects fabrication, a controlled modification of the electro-deposited copper over-deposition (overburden) is performed using a partial chemical–mechanical polishing (CMP) step. Next, copper microstructure is stabilized with a short duration hot-plate anneal. Overburden is then removed during CMP end-of-step. Ionic microscopy and EBSD observations of overburden thickness reduction reveal that copper grain growth occurs differently, according to patterned geometries and with a strong 〈1 1 1〉 texture, as observed in modified films. Reduction of overburden thickness also reveals the capacity of anneal temperature to impact electrical performances. Reliability is impacted for thinnest wires.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 421–425
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 421–425
نویسندگان
O. Dubreuil, V. Caubet-Hilloutou, J. Guillan, K. Haxaire, M. Mellier, P. Caubet, P. Vannier, E. Petitprez, D. Bellet, Ph. Normandon,