InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers

Thermal decay of the integrated PL intensities has been investigated in studied structures as well. The PL thermal decay 10-fold is revealed for the range of 10-300 K in #1 with the In0.15Ga0.85As capping layer compared with the 5-fold thermal decay in #2 for the In0.15Al0.4Ga0.45As capping layer. Finally the reasons for PL spectrum transformation at annealing, the mechanism of PL thermal decay, and the advantages of QD structures with the In0.15Al0.4Ga0.45As capping layer have been analyzed and discussed.