The deposition of nanocrystalline TiO2 thin film on silicon using Sol–Gel technique and its characterization

TiO2 thin films were deposited using Sol–Gel spin coating technique using titanium isoperoxide as the Titania precursor. The films were characterized using X-ray diffraction, capacitance voltage measurement and Raman characterization technique. The XRD and Raman spectra indicate the presence of anatase TiO2 phase in the film. The grain size as calculated using the Scherrer’s formula was found to be 30, 66 and 59 nm for TiO2(0 0 4), TiO2(2 0 0) and TiO2(2 1 1), respectively. The grain size was found to increase after annealing at 800 °C. The dielectric constant as calculated using capacitance voltage measurement was found to be 25. The refractive index of the film was 2.34.