کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399221 | 1392675 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports abnormal effects of Auger recombination in InGaAs/InAlAs quantum well probed by steady state temperature and excitation-power dependent photoluminescence measurements. The transition from Auger recombination to Shockley-Read-Hall recombination is clearly manifested with rising temperature, and abnormal enhancement of Auger recombination at low temperatures is evidenced. Detailed analysis indicates that such enhancement is positively correlated with strong localization, and can be either relative and due to reduction of Shockley-Read-Hall recombination, or absolute and resulted from the confinement-induced uncertainty of momentum. It suggests that excitation-power dependent photoluminescence measurement is effective to assess the side-effect of the localization, and therefore a convenient evaluation routine of alloy quantum wells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 169, Part A, January 2016, Pages 132-136
Journal: Journal of Luminescence - Volume 169, Part A, January 2016, Pages 132-136
نویسندگان
Liang Zhu, Yuxin Song, Zhen Qi, Shumin Wang, Liangqing Zhu, Xiren Chen, Fangxing Zha, Shaoling Guo, Jun Shao,