کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399304 | 1505892 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaN:Mn epilayers were grown on Al2O3 substrate uisng molecular beam epitaxy (MBE) and were subsequently implanted with Mn+ ions (1% and 10%). Photoluminescence (PL) with 1% of Mn showed that optical transitions related to Mn revealed the donor-Mn pair (D, Mn) at 2.5Â eV and the electron-Mn pair (e, Mn) around 3.1Â eV, and yellow luminescence (YL) around 2.20-2.25Â eV. Photoluminescence (PL) with 10% of Mn showed the same but enhanced optical transitions as above. However, the new transitions around 1.65Â eV for the sample with 10% which did not appeared with Mn of 1% were very weakly produced. The results of cathode-luminescence (CL) with 10% of Mn showed transitions related to Mn in PL together with new transitions around 1.72Â eV. However, the new transitions around 1.72Â eV for the sample with 10% according to high accelerating voltage were very remarkably activated in contrast with PL transitions which appeared were very weakly produced in samples with Mn of 10%. Transitions around 1.72Â eV in CL correspond to though around 1.65Â eV in PL. This result means that deep donor (probably, VN) is detected with increasing accelerating voltage and Mn-VN complex is formed. This is supported by strong electron beam sensitivity of the IR emission bands. It is well known that heavy Mn doping (>â¼1019Â CÂ mâ3) leads to a downshift of the Fermi level and promotes the formation of defect complexes of Mn-VN. In our case, Mn doping concentration is >â¼1021Â CÂ mâ3. Therefore, it is conjectured that the CL transition around 1.72Â eV corresponds to Mn-VN complex.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 168, December 2015, Pages 288-292
Journal: Journal of Luminescence - Volume 168, December 2015, Pages 288-292
نویسندگان
J.W. Lee, Yoon Shon, N.G. Subramaniam, Y.H. Kwon, T.W. Kang, Hyunsik Im, H.S. Kim, C.S Park, E.K. Kim, J.D. Song, H.C. Koo, D.J. Fu,