کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5399445 1505905 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dynamics of stacking faults luminescence in GaN/Si nanowires
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Dynamics of stacking faults luminescence in GaN/Si nanowires
چکیده انگلیسی
Moreover we report on two dynamical effects, which confirm two-dimensional character of excitons in SFs. First, decrease of radiative recombination rate at higher temperature rR =1/(αT+t0), shows that excitons have momentum. Second, the SF luminescence peak has an exponential slope, i.e. is similar to thermal distribution, which points to kinetic energy of the excitons. The effective temperature calculated from the shape of the SF peak was in the range of few tens of Kelvins. It decreased in time with the cooling time τC=0.37±0.05 ns.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 155, November 2014, Pages 293-297
نویسندگان
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