Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering

(Sr,Ba)2SiO4:Eu2+ thin films were deposited on Si at different substrate temperatures by magnetron sputtering. The morphology and crystalline phases of the films were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) measurements, respectively. The silicate crystal phase was presented when films were annealed above 900 °C and the annealing temperature had great impact on the film morphology. The samples annealed at 1000 °C in a non-reducing atmosphere for 30 s show intense room temperature Eu2+ emission. These findings may open a promising way to prepare efficient phosphor thin films for on-chip light emitting diodes application.