کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399593 | 1505908 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Emission-energy dependence of ultrafast P-emission decay in ZnO from bulk to nanofilm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have performed time-resolved photoluminescence (PL) spectroscopy for ZnO thin films with thicknesses of 90, 460, and 2800Â nm under intense excitation condition. We clearly observed the P emission due to inelastic exciton-exciton scattering. It was found that, in the 460- and 2800-nm thick samples, the decay time of the P emission considerably depends on the detection energy inversely proportional to the group velocity of the polariton in a bulk crystal with each factor of proportionality. In contrast, the energy dependence is less remarkable in the 90-nm thick sample. The decay times are basically shortened with a decrease in the film thickness. The thickness dependence of the P-emission-decay profiles is explained by considering the crossover from the polariton modes in the 2800-nm thick sample (bulk-like film) to the exciton-/photon-like modes in the 90-nm thick sample (nanofilm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 152, August 2014, Pages 250-253
Journal: Journal of Luminescence - Volume 152, August 2014, Pages 250-253
نویسندگان
Shuji Wakaiki, Hideki Ichida, Motoaki Bamba, Toshiki Kawase, Masaki Kawakami, Kohji Mizoguchi, DaeGwi Kim, Masaaki Nakayama, Yasuo Kanematsu,