کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539975 1450370 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Power-law photoluminescence decay in indirect gap quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Power-law photoluminescence decay in indirect gap quantum dots
چکیده انگلیسی


• We model the photoluminescence decay in quantum dots.
• We assume the indirect band gap transition controlled by longitudinal-optical phonons.
• A power-law decay of the photoluminescence decay in quantum dots is found.
• The photoluminescence decreases with increasing temperature.

In a certain contrast to the standard expectation, according to which the photoluminescence intensity decay in quantum dots could have the mathematical form of exponential function, some experiments indicate a slower type of the intensity decay development, namely in the form of the power-law functional dependence. We are presenting a theoretical interpretation of this phenomenon based on the electron–phonon interaction taken into account in an approximation going beyond the limits of the perturbation theory. We use a simple though quite realistic model of two electronic bound states representing the basic features of the electron in the conduction band states of the InAs small quantum dot. Within this model, the photoluminescence intensity is connected with the electronic level occupation up-conversion process. The electron–phonon coupling is taken into account with the help of the quantum kinetic equations developed with the nonequilibrium Green’s functions.

Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 111, November 2013, Pages 170–174
نویسندگان
, ,