کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399920 | 1505902 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Ultraviolet light-emitting diodes (LED) based on n-ZnO/NiO/p-GaN were realized by metal-organic chemical vapor deposition (MOCVD). The devices exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 7.5Â V. High quality NiO film as an electron blocking layer inserted between the ZnO and GaN films showed high resistance state with preferred [1Â 1Â 1] orientation, which produced a larger ZnO/NiO conduction band offset of 2.93Â eV than that of ZnO/GaN (0.15Â eV). The electroluminescence spectra of the n-ZnO/i-NiO/p-GaN heterostructure demonstrated that electrons were effectively confined in the ZnO active region, and thus leading to the enhancement of the excitonic emission from the ZnO side.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 6-10
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 6-10
نویسندگان
Hui Wang, Yang Zhao, Chao Wu, Xin Dong, Baolin Zhang, Guoguang Wu, Yan Ma, Guotong Du,