کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399957 | 1505902 | 2015 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers](/preview/png/5399957.png)
چکیده انگلیسی
We present a detailed investigation on the optical properties of a 30-layer, strain-coupled InAs/GaAs quantum dot heterostructure. Using a combination of thin In0.15Ga0.85As and GaAs capping layers, we studied the effects of varying their thicknesses on the photoluminescence emission spectrum. From the photoluminescence peak multimodal distribution of the quantum dots is observed. The emission peaks exhibit an initial red-shift; further increasing the thickness of the GaAs spacer produces a continuous blue-shift, and increasing the In0.15Ga0.85As spacer thickness produces a red-shift. The FWHM increases (from a minimum of 22Â nm) and activation energy decreases (with maximum of 377Â meV) with an increase in the thickness of either spacer, starting from a combination of 2-nm In0.15Ga0.85As and 10-nm GaAs capping layers. The inter-subband spectral responses obtained from the fabricated single-pixel detectors are in the mid infrared range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 231-235
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 231-235
نویسندگان
S. Shetty, S. Adhikary, B. Tongbram, A. Ahmad, H. Ghadi, S. Chakrabarti,