کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399961 | 1505902 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Zero-phonon line characteristics of SiV center emission in microcrystalline diamond probed with intensive optical excitation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Zero-phonon line (ZPL) position, broadening and intensity of the SiV center emission was monitored in microcrystalline diamond film by using intensive laser excitation of 2.54Â eV photon energy. Excitation intensity was varied from 150Â kW/cm2 to 700Â kW/cm2 to explore changes in the emission region of the zero-phonon line. Two types of characteristic behavior were found in diamond microcrystals. Both the ZPL position and half width of the SiV center emission remain nearly the same in the one type of microcrystalline samples, whilst considerable broadening and red shift of the ZPL of SiV center with the increasing intensity was observed in the other type of microcrystalline samples. GR1 defect center emission under intensive laser excitation is discussed as a possible origin of the observed changes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 260-264
Journal: Journal of Luminescence - Volume 158, February 2015, Pages 260-264
نویسندگان
S. Tóth, L. Himics, M. Veres, Z. Balogh, V.G. Ralchenko, M. Koós,