Evolution on the structural and optical properties of SiOx films annealed in nitrogen atmosphere

In this paper, thermal annealing in nitrogen atmosphere at temperatures from 900 to 1100 °C was done on the SiOx films to follow the changes in their optical and structural properties. Micro-Raman measurements revealed the existence of a nanocrystalline phase and it become dominant as the annealing temperature increased from 900 to 1100 °C. The last might be an indicative of presence of silicon clusters with high crystallization grade embedded in the SiOx matrix. X-ray diffractograms from samples annealed at 1100 °C showed reflections at 2θ=28.4, 47.3, and 56.1° ascribed to (1 1 1), (2 2 0), and (3 1 1) planes of the silicon respectively. HRTEM measurements confirmed the existence of silicon nanocrystals (Si-ncs) in the SiOx films and both the average size and number of the Si-ncs were modified by the annealing process. Photoluminescence (PL) measurement displayed a broad emission from 400 to 1100 nm. This emission was related to the number of nanocrystals and to the creation of interface defects in SiOx films.