Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

The thermal decay of integrated PL intensities has been investigated as well. The PL thermal decay 557-fold in the range 10-300 K is revealed in the structure with GaAs capping layer in comparison with the 6- and 20-fold PL decays in structures with Al0.3Ga0.7As and Al0.1Ga0.75In0.15As capping layers, respectively. The reason of PL spectrum transformation and the mechanism of PL thermal decay in QD structures with different capping layer compositions have been analyzed and discussed.