کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400294 | 1505914 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of β-Ga2O3 films deposited on MgAl2O4 (1 0 0) substrates by metal-organic chemical vapor deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
β-Ga2O3 films have been prepared on MgAl2O4 (1 0 0) substrates at different temperatures (550-700 °C) by metal-organic chemical vapor deposition (MOCVD). Microstructure analysis revealed that the sample deposited at 650 °C was the single crystal epitaxial film with the best crystallinities. The epitaxial relationship was β-Ga2O3 (1 0 0) || MgAl2O4 (1 0 0) with β-Ga2O3 [0 0 1] || MgAl2O4 ã0 1 1ã. A schematic diagram was proposed to explain the domain structure in the film layer. The average transmittance for the films in the visible range was over 90%. An ultraviolet (UV)-green photoluminescence (PL) from about 350-600 nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 146, February 2014, Pages 1-5
Journal: Journal of Luminescence - Volume 146, February 2014, Pages 1-5
نویسندگان
Wei Mi, Jin Ma, Caina Luan, Hongdi Xiao,