Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D0, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In+Cd and the acceptor [In+CdV2−Cd]−. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, Dcomplex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D1) and dislocation-related (D2) defects. However, the intensity of D2 peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D1 peak increased because of the increase of Cd vacancies by evaporating for a long time.