کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400501 | 1505917 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of picosecond carrier lifetimes in GaAs/AlGaAs single quantum wells grown at 630 °C
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report short carrier lifetimes for GaAs/AlGaAs isolated single quantum wells (35, 50, and 90Â Ã
) grown via molecular beam epitaxy at 630 °C. Photoluminescence (PL) measured at 14-150 K show defect transitions that significantly thermalize at ~77 K. Carrier lifetimes of the quantum wells, measured via time-resolved PL (TRPL), are ~21 ps (35 Ã
), ~39Â ps (50Â Ã
) and ~48Â ps (90Â Ã
). Carrier lifetimes and fluence-dependence measurements suggest that at 77Â K where the shallow levels have thermalized, deeper level defects are still present and act as effective carrier traps. The defect density appears to vary inversely with well-width, and this observed behavior is explained on the basis of interface roughness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 538-541
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 538-541
نویسندگان
Jessica Afalla, Maria Herminia Balgos, Alipio Garcia, Jasher John Ibanes, Arnel Salvador, Armando Somintac,