High resolution variable-shaped beam direct write

The tendency to smaller feature sizes is continuing in the microelectronic industry. EBDW is a well introduced method for research and development of semiconductor devices. A tool architecture based on the variable-shaped beam (VSB) principle offers a significant throughput advantage compared to any Gaussian beam system. A VSB column with high resolution is presented in this paper which is capable of being applied down to the 32 nm node and below. Starting with electron-optical simulations the major influences on the resolution are considered: i.e. coulomb interaction, geometrical and chromatic aberrations. State of the art dynamic corrections are applied to the main field deflector. However, the manufacturing accuracy has also to be taken into account. A well balanced design was necessary to ensure the manufacturability of the final lens. Knife edge measurements were executed to verify the resolution enhancement. Exposed resist patterns are the most important results with respect to their practical use in the semiconductor industry. Several resists, CAR as well as conventional ones, positive and negative resists were exposed to get a realistic impression regarding the resolution capability of the new column. It was possible to achieve 14 nm single lines in HSQ resist.