Accurate parameter extraction for the simulation of direct structuring by ion beams

In this work, methods for an accurate extraction of parameters for the simulation of nanoscaled structuring by focused ion beams will be discussed. For this purpose the quantitative understanding of the underlying effects (i.e. redeposition of sputtered atoms, the dependence of sputter yield on the angle of incidence, and the influence of scattered ions) is obligatory. Parameter values obtained from experiment and simulation will be compared and successfully be applied for the simulation of sputtered 2D structures.