Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects

- In this paper we explore the effects of the barrier width, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs).
- The calculated results reveal that the resonant peaks of the NOR can be blue-shifted to large photon energies or red-shifted to lower photon energies.
- In this paper, all parameters: electromagnetic fields, pressure and temperature effects are introduced and investigated.
- The resonant energy and the magnitude of the NOR are controlled and adjusted.

In this paper we explore the effects of the structural dimensions, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs). The analytical expression of the NOR is analyzed by using the density matrix formalism, the effective mass and the Finite Difference Method (FDM). Obtained results show that the NOR obtained with this coupled system is not a monotonic function of the barrier width, electromagnetic fields, pressure and temperature. Also, calculated results reveal that the resonant peaks of the NOR can be blue-shifted or red-shifted energies depending on the energy of the lowest confined states in the VCQDs structure. In addition, this condition can be controlled by changes in the structural dimensions and the external proofs mentioned above.