Near-ultraviolet light-emitting diodes realized from n-ZnO nanorod/p-GaN direct-bonding heterostructures

► The growth of the ZnO nanorods was fabricated at very low temperature. ► High-quality heterojunctions were formed between the ZnO nanorod top tips and p-GaN. ► Defect-related electroluminescence emissions were absent. ► We discussed the electroluminescence origination and related carrier transport mechanism.