کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400927 | 1392704 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The dependence of Eu3+ photoluminescence (PL) properties on Eu concentration was studied in Eu-doped ZnO (ZnO:Eu) thin films grown by sputtering-assisted metalorganic chemical vapor deposition (SA-MOCVD). The ZnO:Eu showed band-edge PL from ZnO and red emission lines due to the intra-4f transitions in Eu3+ ions at room temperature (RT). The intensities of band-edge and Eu3+ PL decreased with the increasing Eu concentration. In the temperature dependence of Eu3+ PL, the ZnO:Eu with high Eu concentration showed large thermal quenching of the PL intensity. In addition, the lifetimes of Eu3+ PL became short at high Eu concentration. The concentration quenching mechanism of Eu3+ PL using a model based on non-radiative recombination processes in ZnO and Eu3+ ions was presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3125-3128
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3125-3128
نویسندگان
Takahiro Tsuji, Yoshikazu Terai, Muhammad Hakim Bin Kamarudin, Kazuki Yoshida, Yasufumi Fujiwara,