کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5400930 1392704 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Rare-earth doped III-nitride semiconductors for semiconductor spintronics
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Rare-earth doped III-nitride semiconductors for semiconductor spintronics
چکیده انگلیسی
InGaGdN layers and InGaGdN/GaN superlattice (SL) structures were grown by plasma-assisted molecular beam epitaxy. InGaGdN layers exhibited photoluminescence emission at room temperature and its peak wavelength was red-shifted with the increase of In composition. Clear hysteresis and saturation were observed in the magnetization versus magnetic field curves at room temperature for the InGaGdN layers. Si co-doping into InGaGdN layers increased the electron carrier concentration and enhanced the magnetization. In the InGaGdN/GaN SL samples, enhanced magnetization was also observed. Si doping into wide bandgap GaN layers in these SL structures further increased the magnetization, where InGaGdN layers were not doped with Si. All these results can be understood with the carrier-mediated ferromagnetism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3136-3140
نویسندگان
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