کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400931 | 1392704 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Directing photophysics and structure in semiconductor nanowires with erbium and germanium
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Recent efforts from our labs have focused on the fundamental properties of erbium incorporated into Ge nanowires (Ge NWs) and a diverse number of radial core/shell platforms containing these two elements. In this review we focus on two beneficial outcomes that can be exploited from such structures to even broader families of nanostructures: (a) the useful chemical and photophysical utility of providing wide bandgap oxide shells onto germanium nanowire cores containing rare earth ions such as erbium; (b) the unique combination of germanium and tin in an erbium doped oxide nanowire to engage in a spontaneous oxidation-reduction reaction that enhances the erbium near infrared photoluminescence (PL). A broad range of spectroscopic (PL, PL excitation) and structural (high resolution transmission electron microscopy, scanning electron microscopy, Raman spectroscopy, and energy dispersive X-ray analysis) tools are employed for this evaluation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3141-3147
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3141-3147
نویسندگان
Xuezhen Huang, Ji Wu, Jeffery L. Coffer,