Photoluminescence peculiarities in InGaAs/GaAs structures with different InAs quantum dot densities

► PL of InAs QDs embedded in InGaAs/GaAs quantum wells has been investigated. ► Non-monotonous dependence of PL parameters versus QD density and sizes has been revealed. ► Non-monotonous dependence of elastic strain versus QD density has been obtained by XRD. ► Non-monotonous dependences of PL and elastic strains have been analyzed.