Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters

► We studied photoluminescence of Er in SiO2 thin films doped with Si nanoclusters. ► Presence of ITO layer on the top enhances photoluminescence decay rate of Er. ► The effect depends on the thickness of active film. ► Radiative rate change in proximity of ITO layer was calculated theoretically. ► The calculation results are compared with the experiment and discussed.