Process impact of mask grid variation

This paper will focus on the process impact of the intentional change in the mask writing grid. Grids ranging from 1 nm to 4 nm (defined at mask level) were used to investigate the effect on test structures in critical locations. The impact on optical proximity correction (OPC) to control line end pull back, corner rounding and general image fidelity will be investigated on >1 numerical aperture (NA) immersion imaging system.