Optical characterization of Zn-doped In0.14Ga0.86As0.13Sb0.87 layers grown by liquid phase epitaxy

► In this work the optical characterization of InGaAsSb highly doped with zinc by grown LPE.is reported ► It analyses the LT-PL of p-type InGaAsSb layersis analzysed as a function of incorporated zinc concentration. ► The PL was interpreted using a model that takes into account nonparabolicity of the valence band. ► The band-to-band transition energy can be used to estimate the hole concentration in InGaAsSb.