کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5401209 1505926 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and physical properties of luminescent 80GeSe2·(20−x)Sb2Se3·xSb2Tey:Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Preparation and physical properties of luminescent 80GeSe2·(20−x)Sb2Se3·xSb2Tey:Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4
چکیده انگلیسی

Homogeneous glasses of the system 80GeSe2·(20−x)Sb2Se3·xSb2Tey:0.03Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4 were prepared. The glasses with x=0-3 are very stable without any crystallization for T<600 °C. The Tg values (261-309 °C) and the Egopt values (1.30-1.70 eV) are decreasing with the Te content. The index of refraction is high (2.55-2.73 for 2200 nm), it is increasing with increasing Te content. The Raman spectra revealed presence of GeSe4/2 tetrahedra, Ge2Se6/2 bi-tetrahedra and SbSe3/2 trigonal pyramids in studied glasses. The tellurium atoms are forming SbSe2Te and SbSeTe2 distorted pyramids. The strong luminescence corresponding to 4f transitions in Pr3+ ions was found in spectral regions (1100-1450 nm, 1500-1700 nm, 1750-2000, 2000-2600 nm and 3600-5200 nm; λexc=980, 1050 and 1550 nm). The intensities of luminescence bands depend on their composition.The prepared glasses are promising candidates for infrared luminescence applications in NIR and MID IR region up to λ≈5200 nm. High index of refraction and high value of third-order non-linear optical susceptibility χ(3) (≈300 times higher than χ(3) for SiO2) are promising for application of these glasses in optoelectronic devices. Good glass forming parameters are perspective for preparation of fibers.

► GeSe2-Sb2Se3-Sb2Te3:Pr2Se3 glasses. ► Preparation, structure, thermal and optical properties. ► Strong Pr3+ luminescence in near- and mid-IR regions. ► High index of refraction, strong optical nonlinearity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 134, February 2013, Pages 558-565
نویسندگان
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