Electron beam lithography at 10 keV using an epoxy based high resolution negative resist

The behaviour of a new epoxy based resist (mr-EBL 6000.1 XP) as a negative resist for e-beam lithography is presented. We demonstrate that it is possible to define sub-100 nm patterns when irradiating thin (120 nm) layers of resist with a 10 keV electron beam. The dependence of resolution and remaining thickness on electron dose, electron energy and photo acid generator (PAG) content is determined. After the electron beam lithography process, the resist is used as a mask for reactive ion etching. It presents a good etch resistance, that allows transfer of patterns to the substrate with resolution below 100 nm.